IHW20N65R5 IGBT Transistor

The IHW20N65R5 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IHW20N65R5 transistor as follows.

IHW20N65R5 Transistor Specification

Transistor Code		IHW20N65R5
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.35V
Collector Current (Maximum)	IC	40A
Operating Junction Temperature (Maximum)		175 oC
Rise Time		16

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