IXGH24N60CD1 IGBT Transistor

The IXGH24N60CD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGH24N60CD1 transistor as follows.

IXGH24N60CD1 Transistor Specification

Transistor Code		IXGH24N60CD1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector Current (Maximum)	IC	48A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		1500pF
Rise Time		55

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