RJP4010AGE IGBT Transistor

The RJP4010AGE is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJP4010AGE transistor as follows.

RJP4010AGE Transistor Specification

Transistor Code		RJP4010AGE
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TSOJ8
Collector Power Dissipation (Maximum)	Pc	1.6W
Collector-Emitter Voltage (Maximum)	VCE	400V
Gate-Emitter Voltage (Maximum)	VGE	6V
Collector-Emitter Saturation Voltage	VCE(on)	4.5V
Collector Current (Maximum)	IC	150A
Operating Junction Temperature (Maximum)		150 oC

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