HGTD7N60C3S9A IGBT Transistor

The HGTD7N60C3S9A is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTD7N60C3S9A transistor as follows.

HGTD7N60C3S9A Transistor Specification

Transistor Code		HGTD7N60C3S9A
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO252AA
Collector Power Dissipation (Maximum)	Pc	60W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2V
Collector Current (Maximum)	IC	14A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		8.5

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