IXGK50N90B2D1 IGBT Transistor

The IXGK50N90B2D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGK50N90B2D1 transistor as follows.

IXGK50N90B2D1 Transistor Specification

Transistor Code		IXGK50N90B2D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO264
Collector-Emitter Voltage (Maximum)	VCE	900V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	75A
Rise Time		200

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