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FGW50N60HC(50G60HC) IGBT Transistor

The FGW50N60HC(50G60HC) is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGW50N60HC(50G60HC) transistor as follows.

FGW50N60HC(50G60HC) Transistor Specification

Transistor Code		FGW50N60HC(50G60HC)
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	P_c	360W
Collector-Emitter Voltage (Maximum)	V_CE	600V
Gate-Emitter Voltage (Maximum)	V_GE	20V
Collector-Emitter Saturation Voltage	V_CE(on)	1.5V
Collector Current (Maximum)	I_C	50A
Operating Junction Temperature (Maximum)		175 ^oC
Collector Capacitance		210
Rise Time		70

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