IXDR35N60BD1 IGBT Transistor

The IXDR35N60BD1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXDR35N60BD1 transistor as follows.

IXDR35N60BD1 Transistor Specification

Transistor Code		IXDR35N60BD1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOPLUS247
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.7V
Collector Current (Maximum)	IC	38A
Rise Time		70

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