BT30N60ANF IGBT Transistor

The BT30N60ANF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the BT30N60ANF transistor as follows.

BT30N60ANF Transistor Specification

Transistor Code		BT30N60ANF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3PN
Collector Power Dissipation (Maximum)	Pc	312W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		140
Rise Time		36

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