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GT15Q101 IGBT Transistor

The GT15Q101 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT15Q101 transistor as follows.

Circuit diagram symbol of the GT15Q101 transistor

GT15Q101 Transistor Specification

Transistor Code GT15Q101
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TOP3
Collector Power Dissipation (Maximum) Pc 150W
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector-Emitter Saturation Voltage VCE(on) 4V
Collector Current (Maximum) IC 15A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 500

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