NGD18N45 IGBT Transistor

The NGD18N45 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGD18N45 transistor as follows.

NGD18N45 Transistor Specification

Transistor Code		NGD18N45
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO252
Collector Power Dissipation (Maximum)	Pc	115W
Collector-Emitter Voltage (Maximum)	VCE	450V
Gate-Emitter Voltage (Maximum)	VGE	18V
Collector-Emitter Saturation Voltage	VCE(on)	2.07V
Collector Current (Maximum)	IC	18A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		72

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