STGB30V60DF IGBT Transistor

The STGB30V60DF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGB30V60DF transistor as follows.

STGB30V60DF Transistor Specification

Transistor Code		STGB30V60DF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO263
Collector Power Dissipation (Maximum)	Pc	260W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.15V
Collector Current (Maximum)	IC	30A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		120
Rise Time		16

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