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STGWT30V60DF IGBT Transistor

The STGWT30V60DF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGWT30V60DF transistor as follows.

Circuit diagram symbol of the STGWT30V60DF transistor

STGWT30V60DF Transistor Specification

Transistor Code STGWT30V60DF
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3P
Collector Power Dissipation (Maximum) Pc 260W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 2.15V
Collector Current (Maximum) IC 30A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 120
Rise Time 16

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