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GT20D101O IGBT Transistor

The GT20D101O is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT20D101O transistor as follows.

Circuit diagram symbol of the GT20D101O transistor

GT20D101O Transistor Specification

Transistor Code GT20D101O
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 180W
Collector-Emitter Voltage (Maximum) VCE 250V
Collector-Emitter Saturation Voltage VCE(on) 2.4V
Collector Current (Maximum) IC 20A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 1400

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