GT20D101O IGBT Transistor

The GT20D101O is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the GT20D101O transistor as follows.

GT20D101O Transistor Specification

Transistor Code		GT20D101O
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	180W
Collector-Emitter Voltage (Maximum)	VCE	250V
Collector-Emitter Saturation Voltage	VCE(on)	2.4V
Collector Current (Maximum)	IC	20A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		1400

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