G12N60D1 IGBT Transistor

The G12N60D1 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the G12N60D1 transistor as follows.

G12N60D1 Transistor Specification

Transistor Code		G12N60D1
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector Power Dissipation (Maximum)	Pc	75W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.9V
Collector Current (Maximum)	IC	21A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		100

UXPython is not the creator or an official representative of the G12N60D1 IGBT transistor. You can download the official G12N60D1 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

APT50GF120LRG IGBT Transistor IXGH10N300 IGBT Transistor APTGF150DA120T IGBT Transistor STGP20V60DF IGBT Transistor BSM100GAL120DLCK IGBT Transistor IXGB75N60BD1 IGBT Transistor CY20AAJ-8H IGBT Transistor STGW40H60DLFB IGBT Transistor STGB20NB32LZ IGBT Transistor FB20R06W1E3 IGBT Transistor STGF19NC60KD IGBT Transistor MII300-12A4 IGBT Transistor RJH6088BDPK IGBT Transistor SM2G100US60 IGBT Transistor IXGH30N60B2D1 IGBT Transistor IRGP4266D IGBT Transistor SG12N06DP IGBT Transistor IXBH22N300HV IGBT Transistor NTE3312 IGBT Transistor IXST30N60B2D1 IGBT Transistor