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NTE3312 IGBT Transistor

The NTE3312 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NTE3312 transistor as follows.

Circuit diagram symbol of the NTE3312 transistor

NTE3312 Transistor Specification

Transistor Code NTE3312
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO3P
Collector Power Dissipation (Maximum) Pc 100W
Collector-Emitter Voltage (Maximum) VCE 1200V
Collector Current (Maximum) IC 8A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 1150

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