NTE3312 IGBT Transistor

The NTE3312 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NTE3312 transistor as follows.

NTE3312 Transistor Specification

Transistor Code		NTE3312
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector Power Dissipation (Maximum)	Pc	100W
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector Current (Maximum)	IC	8A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		1150

UXPython is not the creator or an official representative of the NTE3312 IGBT transistor. You can download the official NTE3312 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

STGP19NC60H IGBT Transistor SKM100GB176D IGBT Transistor IXGH36N60B3D1 IGBT Transistor STGWA15M120DF3 IGBT Transistor IXGT40N60B2 IGBT Transistor STGWA25H120F2 IGBT Transistor IXER35N120D1 IGBT Transistor STGW20V60F IGBT Transistor IRGSL6B60K IGBT Transistor MMG150D170B6EN IGBT Transistor IRGP4266D IGBT Transistor APTGF50DSK60T3 IGBT Transistor NGB8207AB IGBT Transistor FD600R16KF4 IGBT Transistor IXGT32N120A3 IGBT Transistor RJH60D0DPQ-A0 IGBT Transistor IXGX60N60B2D1 IGBT Transistor STGW60V60DF IGBT Transistor STGF19NC60KD IGBT Transistor STGW19NC60HD IGBT Transistor