SG12N06DP IGBT Transistor

The SG12N06DP is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SG12N06DP transistor as follows.

SG12N06DP Transistor Specification

Transistor Code		SG12N06DP
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220AB
Collector Power Dissipation (Maximum)	Pc	100W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	24A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		100
Rise Time		20

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