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STGW40H60DLFB IGBT Transistor

The STGW40H60DLFB is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGW40H60DLFB transistor as follows.

Circuit diagram symbol of the STGW40H60DLFB transistor

STGW40H60DLFB Transistor Specification

Transistor Code STGW40H60DLFB
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 283W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.7V
Collector Current (Maximum) IC 40A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 198

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