CPV363M4UPBF IGBT Transistor

The CPV363M4UPBF is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the CPV363M4UPBF transistor as follows.

CPV363M4UPBF Transistor Specification

Transistor Code		CPV363M4UPBF
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		SIP
Collector Power Dissipation (Maximum)	Pc	36W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	6.8A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		73
Rise Time		14

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