FGW35N60H(35G60H) IGBT Transistor

The FGW35N60H(35G60H) is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FGW35N60H(35G60H) transistor as follows.

FGW35N60H(35G60H) Transistor Specification

Transistor Code		FGW35N60H(35G60H)
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO247
Collector Power Dissipation (Maximum)	Pc	230W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.5V
Collector Current (Maximum)	IC	35A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		140
Rise Time		60

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