HGTP5N120CND IGBT Transistor

The HGTP5N120CND is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the HGTP5N120CND transistor as follows.

HGTP5N120CND Transistor Specification

Transistor Code		HGTP5N120CND
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220AB
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector Current (Maximum)	IC	25A
Operating Junction Temperature (Maximum)		150 oC

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