IXGT32N60C IGBT Transistor

The IXGT32N60C is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGT32N60C transistor as follows.

IXGT32N60C Transistor Specification

Transistor Code		IXGT32N60C
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO268
Collector-Emitter Voltage (Maximum)	VCE	600V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	60A
Rise Time		55

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