NGB8206N IGBT Transistor

The NGB8206N is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the NGB8206N transistor as follows.

NGB8206N Transistor Specification

Transistor Code		NGB8206N
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		D2PAK-3
Collector Power Dissipation (Maximum)	Pc	150W
Collector-Emitter Voltage (Maximum)	VCE	350V
Collector-Emitter Saturation Voltage	VCE(on)	1.3V
Collector Current (Maximum)	IC	20A

UXPython is not the creator or an official representative of the NGB8206N IGBT transistor. You can download the official NGB8206N IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

IXGH32N60C IGBT Transistor APTGT150SK170D1 IGBT Transistor G12N60C3D IGBT Transistor VS-GT175DA120U IGBT Transistor SGW6N60UF IGBT Transistor VS-GT75NP120N IGBT Transistor IXGA12N60B IGBT Transistor MMG100SR060DE IGBT Transistor APT11GP60K IGBT Transistor FF300R06KE3 IGBT Transistor IGC70T120T8RL IGBT Transistor IRGSL6B60KD IGBT Transistor DM2G400SH6A IGBT Transistor IXXR100N60B3H1 IGBT Transistor APTGT30DA170D1 IGBT Transistor HGTP12N60A4D IGBT Transistor MWI50-06A7 IGBT Transistor APTGF330SK60D3 IGBT Transistor AOB15B60D IGBT Transistor IXGF25N300 IGBT Transistor