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RJH60F6BDPQ-A0 IGBT Transistor

The RJH60F6BDPQ-A0 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJH60F6BDPQ-A0 transistor as follows.

Circuit diagram symbol of the RJH60F6BDPQ-A0 transistor

RJH60F6BDPQ-A0 Transistor Specification

Transistor Code RJH60F6BDPQ-A0
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247A
Collector Power Dissipation (Maximum) Pc 297.6W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 30V
Collector-Emitter Saturation Voltage VCE(on) 1.35V
Collector Current (Maximum) IC 85A
Operating Junction Temperature (Maximum) 150 oC
Collector Capacitance 150
Rise Time 80

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