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STGWA80H65DFB IGBT Transistor

The STGWA80H65DFB is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGWA80H65DFB transistor as follows.

Circuit diagram symbol of the STGWA80H65DFB transistor

STGWA80H65DFB Transistor Specification

Transistor Code STGWA80H65DFB
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package TO247
Collector Power Dissipation (Maximum) Pc 469W
Collector-Emitter Voltage (Maximum) VCE 650V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.8V
Collector Current (Maximum) IC 80A
Operating Junction Temperature (Maximum) 175 oC
Collector Capacitance 385
Rise Time 52

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