APT12GT60KRG IGBT Transistor

The APT12GT60KRG is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the APT12GT60KRG transistor as follows.

APT12GT60KRG Transistor Specification

Transistor Code		APT12GT60KRG
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220
Collector Power Dissipation (Maximum)	Pc	108W
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	30V
Collector-Emitter Saturation Voltage	VCE(on)	2.5V
Collector Current (Maximum)	IC	25A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		75
Rise Time		6

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