IXGF20N250 IGBT Transistor

The IXGF20N250 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the IXGF20N250 transistor as follows.

IXGF20N250 Transistor Specification

Transistor Code		IXGF20N250
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		ISOPLUS_I4-PAK
Collector-Emitter Voltage (Maximum)	VCE	2500V
Collector-Emitter Saturation Voltage	VCE(on)	3.1V
Collector Current (Maximum)	IC	23A
Rise Time		930

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