SKM75GAR063D IGBT Transistor

The SKM75GAR063D is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SKM75GAR063D transistor as follows.

SKM75GAR063D Transistor Specification

Transistor Code		SKM75GAR063D
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		MODULE
Collector-Emitter Voltage (Maximum)	VCE	600V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	2.1V
Collector Current (Maximum)	IC	100A
Operating Junction Temperature (Maximum)		150 oC
Collector Capacitance		500
Rise Time		50

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