STGWT60H65DFB IGBT Transistor

The STGWT60H65DFB is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the STGWT60H65DFB transistor as follows.

STGWT60H65DFB Transistor Specification

Transistor Code		STGWT60H65DFB
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO3P
Collector Power Dissipation (Maximum)	Pc	375W
Collector-Emitter Voltage (Maximum)	VCE	650V
Gate-Emitter Voltage (Maximum)	VGE	20V
Collector-Emitter Saturation Voltage	VCE(on)	1.75V
Collector Current (Maximum)	IC	60A
Operating Junction Temperature (Maximum)		175 oC
Collector Capacitance		262
Rise Time		38

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