SIB417DK MOSFET Transistor

The SIB417DK is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIB417DK transistor as follows.

SIB417DK Transistor Specification

Transistor Code		SIB417DK
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-75-6L
Drain-Source Voltage (Maximum)	VDS	8V
Gate-Source Voltage (Maximum)	VGS	5V
Drain Current (Maximum)	ID	5.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.052Ohm
Power Dissipation (Maximum)	PD	2.4W
Drain-Source Capacitance		217pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		31nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		8.5nC

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