SIB411DK MOSFET Transistor

The SIB411DK is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIB411DK transistor as follows.

SIB411DK Transistor Specification

Transistor Code		SIB411DK
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-75-6L
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.066Ohm
Power Dissipation (Maximum)	PD	2.4W
Drain-Source Capacitance		95pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		10nC

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