SIB412DK MOSFET Transistor

The SIB412DK is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIB412DK transistor as follows.

SIB412DK Transistor Specification

Transistor Code		SIB412DK
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC-75-6L
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	6.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.034Ohm
Power Dissipation (Maximum)	PD	2.4W
Drain-Source Capacitance		85pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		16nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		6.77nC

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