SIB417EDK MOSFET Transistor

The SIB417EDK is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIB417EDK transistor as follows.

SIB417EDK Transistor Specification

Transistor Code		SIB417EDK
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-75-6L
Drain-Source Voltage (Maximum)	VDS	8V
Gate-Source Voltage (Maximum)	VGS	5V
Drain Current (Maximum)	ID	5.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.058Ohm
Power Dissipation (Maximum)	PD	2.4W
Drain-Source Capacitance		215pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		31nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		8nC

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