SIB415DK MOSFET Transistor

The SIB415DK is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIB415DK transistor as follows.

SIB415DK Transistor Specification

Transistor Code		SIB415DK
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-75-6L
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	4.17A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.087Ohm
Power Dissipation (Maximum)	PD	2.4W
Drain-Source Capacitance		70pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		55nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		6.7nC

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