FQI3N40TU MOSFET Transistor

The FQI3N40TU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI3N40TU transistor as follows.

FQI3N40TU Transistor Specification

Transistor Code		FQI3N40TU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2-PAK
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	5Ohm
Power Dissipation (Maximum)	PD	55W
Drain-Source Capacitance		35pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		6nC

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