FQI8P10TU MOSFET Transistor

The FQI8P10TU is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI8P10TU transistor as follows.

FQI8P10TU Transistor Specification

Transistor Code		FQI8P10TU
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		I2-PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.53Ohm
Power Dissipation (Maximum)	PD	65W
Drain-Source Capacitance		120pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		110nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		12nC

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