FCI11N60 MOSFET Transistor

The FCI11N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FCI11N60 transistor as follows.

FCI11N60 Transistor Specification

Transistor Code		FCI11N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2-PAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.38Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		671pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		98nS
Gate-Threshold Voltage (Maximum)		5V

UXPython is not the creator or an official representative of the FCI11N60 MOSFET transistor. You can download the official FCI11N60 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FQI5N60CTU MOSFET Transistor FQI13N50CTU MOSFET Transistor SUN0465I2 MOSFET Transistor FQI2P25TU MOSFET Transistor FQI3N90TU MOSFET Transistor FQI8N60CTU MOSFET Transistor SUN0765I2 MOSFET Transistor FQI9N15TU MOSFET Transistor FQI6N60CTU MOSFET Transistor FQI12N60CTU MOSFET Transistor FQI13N06TU MOSFET Transistor FQI17N08LTU MOSFET Transistor FQI9N50TU MOSFET Transistor SUN0760I2 MOSFET Transistor FQI3N25TU MOSFET Transistor FQI7N10LTU MOSFET Transistor FQI17P06TU MOSFET Transistor FQI3N30TU MOSFET Transistor FQI6N40CTU MOSFET Transistor FQI5N80TU MOSFET Transistor