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FQI9N08TU MOSFET Transistor

The FQI9N08TU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI9N08TU transistor as follows.

Circuit diagram symbol of the FQI9N08TU transistor

FQI9N08TU Transistor Specification

Transistor Code FQI9N08TU
Transistor Type MOSFET
Control Channel Type N-Channel
Package I2-PAK
Drain-Source Voltage (Maximum) VDS 80V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 9.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.21Ohm
Power Dissipation (Maximum) PD 40W
Drain-Source Capacitance 70pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 28nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 5.9nC

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