FQI5N80TU MOSFET Transistor

The FQI5N80TU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI5N80TU transistor as follows.

FQI5N80TU Transistor Specification

Transistor Code		FQI5N80TU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2-PAK
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.6Ohm
Power Dissipation (Maximum)	PD	140W
Drain-Source Capacitance		95pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		60nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		25nC

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