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FQB8N60CFTM MOSFET Transistor

The FQB8N60CFTM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB8N60CFTM transistor as follows.

Circuit diagram symbol of the FQB8N60CFTM transistor

FQB8N60CFTM Transistor Specification

Transistor Code FQB8N60CFTM
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2-PAK
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 6.26A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.5Ohm
Power Dissipation (Maximum) PD 147W
Drain-Source Capacitance 105pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 60.5nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 28nC

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