HFW11N40 MOSFET Transistor

The HFW11N40 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFW11N40 transistor as follows.

HFW11N40 Transistor Specification

Transistor Code		HFW11N40
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	11.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.48Ohm
Power Dissipation (Maximum)	PD	147W
Drain-Source Capacitance		180pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		120nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		35nC

UXPython is not the creator or an official representative of the HFW11N40 MOSFET transistor. You can download the official HFW11N40 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FQB12P10TM MOSFET Transistor FQB4N90TM MOSFET Transistor FQB17P10TM MOSFET Transistor FQB6N40CTM MOSFET Transistor FQB9N08TM MOSFET Transistor FQB19N20LTM MOSFET Transistor SSW2N60B MOSFET Transistor HFW9N50 MOSFET Transistor HFW5N50S MOSFET Transistor FQB3P50TM MOSFET Transistor FQB33N10LTM MOSFET Transistor SMK1820D2 MOSFET Transistor FQB12P20TM MOSFET Transistor FQB20N06LTM MOSFET Transistor HFW5N65U MOSFET Transistor FQB4N50TM MOSFET Transistor FQB7N20LTM MOSFET Transistor FQB1P50TM MOSFET Transistor FQB50N06TM MOSFET Transistor FQB20N06TM MOSFET Transistor