HFW8N65U MOSFET Transistor

The HFW8N65U is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFW8N65U transistor as follows.

HFW8N65U Transistor Specification

Transistor Code		HFW8N65U
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	150W
Drain-Source Capacitance		100pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		50nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		22nC

UXPython is not the creator or an official representative of the HFW8N65U MOSFET transistor. You can download the official HFW8N65U MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FQB7P06TM MOSFET Transistor FQB50N06TM MOSFET Transistor FQB4N20TM MOSFET Transistor FQB12N50TM_AM002 MOSFET Transistor HFW6N90 MOSFET Transistor FQB7N65CTM MOSFET Transistor FQB16N25TM MOSFET Transistor FQB13N06LTM MOSFET Transistor FQB4N50TM MOSFET Transistor FQB33N10LTM MOSFET Transistor HFW5N60S MOSFET Transistor FQB5N50CTM MOSFET Transistor FQB2N60TM MOSFET Transistor FQB55N10TM MOSFET Transistor FQB1N60TM MOSFET Transistor FCB36N60NTM MOSFET Transistor FQB9N15TM MOSFET Transistor HFW50N06 MOSFET Transistor FQB12P20TM MOSFET Transistor FQB5N15TM MOSFET Transistor