SSW2N60B MOSFET Transistor

The SSW2N60B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSW2N60B transistor as follows.

SSW2N60B Transistor Specification

Transistor Code		SSW2N60B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	5Ohm
Power Dissipation (Maximum)	PD	54W
Drain-Source Capacitance		35pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		50nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		12.5nC

UXPython is not the creator or an official representative of the SSW2N60B MOSFET transistor. You can download the official SSW2N60B MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FQB50N06LTM MOSFET Transistor FQB1N60TM MOSFET Transistor FQB5N20TM MOSFET Transistor FDB86563_F085 MOSFET Transistor FQB4N50TM MOSFET Transistor FQB11N40CTM MOSFET Transistor FQB2P25TM MOSFET Transistor FQB17P10TM MOSFET Transistor FCB20N60FTM MOSFET Transistor FDB44N25TM MOSFET Transistor FQB13N10 MOSFET Transistor FQB17N08TM MOSFET Transistor FQB25N33TM MOSFET Transistor FQB12N60CTM MOSFET Transistor FQB12N60TM_AM002 MOSFET Transistor HFW5N60S MOSFET Transistor SSW4N60B MOSFET Transistor HFW8N65U MOSFET Transistor FQB7N30TM MOSFET Transistor FQB9P25TM MOSFET Transistor