FQB6N40CTM MOSFET Transistor

The FQB6N40CTM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB6N40CTM transistor as follows.

FQB6N40CTM Transistor Specification

Transistor Code		FQB6N40CTM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	73W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		65nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		16nC

UXPython is not the creator or an official representative of the FQB6N40CTM MOSFET transistor. You can download the official FQB6N40CTM MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FQB3N90TM MOSFET Transistor FQB11N40TM MOSFET Transistor FQB34N20LTM MOSFET Transistor FQB12N60CTM MOSFET Transistor FQB13N06TM MOSFET Transistor FQB25N33TM MOSFET Transistor FQB5N30TM MOSFET Transistor FQB19N20TM MOSFET Transistor FQB3N40TM MOSFET Transistor FQB9N25TM MOSFET Transistor FQB7N30TM MOSFET Transistor FQB6N50 MOSFET Transistor HFW9N50 MOSFET Transistor FQB55N10TM MOSFET Transistor FQB19N10LTM MOSFET Transistor FQB13N06LTM MOSFET Transistor FQB4P25TM MOSFET Transistor FQB10N20C MOSFET Transistor FQB6N60CTM MOSFET Transistor FQB6N80TM MOSFET Transistor