FQB19N10LTM MOSFET Transistor

The FQB19N10LTM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB19N10LTM transistor as follows.

FQB19N10LTM Transistor Specification

Transistor Code		FQB19N10LTM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	19A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		410nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		14nC

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