FQB11P06TM MOSFET Transistor

The FQB11P06TM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB11P06TM transistor as follows.

FQB11P06TM Transistor Specification

Transistor Code		FQB11P06TM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	11.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.175Ohm
Power Dissipation (Maximum)	PD	53W
Drain-Source Capacitance		195pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		13nC

UXPython is not the creator or an official representative of the FQB11P06TM MOSFET transistor. You can download the official FQB11P06TM MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in P-Channel MOSFET

FQB19N20LTM MOSFET Transistor FQB85N06TM_AM002 MOSFET Transistor PSMN015-60BS MOSFET Transistor FQB50N06TM MOSFET Transistor FQB3N40TM MOSFET Transistor FQB7N60TM MOSFET Transistor FQB5N50CFTM MOSFET Transistor FQB14N30TM MOSFET Transistor FQB12N60CTM MOSFET Transistor FQB7N30TM MOSFET Transistor SMK1625D2 MOSFET Transistor FQB55N06TM MOSFET Transistor FQB30N06TM MOSFET Transistor FQB5N30TM MOSFET Transistor SSW4N60B MOSFET Transistor SMK1820D2 MOSFET Transistor HFW12N60S MOSFET Transistor FQB3N25TM MOSFET Transistor FQB70N10TM_AM002 MOSFET Transistor FDB86563_F085 MOSFET Transistor