FQB4N20LTM MOSFET Transistor

The FQB4N20LTM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB4N20LTM transistor as follows.

FQB4N20LTM Transistor Specification

Transistor Code		FQB4N20LTM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	3.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.35Ohm
Power Dissipation (Maximum)	PD	45W
Drain-Source Capacitance		36pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		70nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		4nC

UXPython is not the creator or an official representative of the FQB4N20LTM MOSFET transistor. You can download the official FQB4N20LTM MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FQB6N50 MOSFET Transistor PSMN004-36B MOSFET Transistor FQB34N20LTM MOSFET Transistor FQB3N30TM MOSFET Transistor FQB9N15TM MOSFET Transistor FQB13N10 MOSFET Transistor FQB30N06TM MOSFET Transistor PHB45N03LTA MOSFET Transistor FCB11N60TM MOSFET Transistor FQB4N25TM MOSFET Transistor FQB5N90TM MOSFET Transistor FQB9N08TM MOSFET Transistor FQB12N60TM_AM002 MOSFET Transistor FQB24N08TM MOSFET Transistor FQB19N20TM MOSFET Transistor FQB32N20CTM MOSFET Transistor SSW4N60B MOSFET Transistor FQB9N08LTM MOSFET Transistor FQB8N25TM MOSFET Transistor HFW5N50S MOSFET Transistor