FQB22P10TM MOSFET Transistor

The FQB22P10TM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB22P10TM transistor as follows.

FQB22P10TM Transistor Specification

Transistor Code		FQB22P10TM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	22A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.125Ohm
Power Dissipation (Maximum)	PD	125W
Drain-Source Capacitance		460pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		170nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		40nC

UXPython is not the creator or an official representative of the FQB22P10TM MOSFET transistor. You can download the official FQB22P10TM MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in P-Channel MOSFET

FQB9P25TM MOSFET Transistor FQB19N20TM MOSFET Transistor FQB3P50TM MOSFET Transistor FQB3N60CTM MOSFET Transistor FQB5N15TM MOSFET Transistor FQB10N20C MOSFET Transistor FQB25N33TM MOSFET Transistor SMK1625D2 MOSFET Transistor FQB20N06LTM MOSFET Transistor HFW12N60S MOSFET Transistor SMK1430DI MOSFET Transistor FQB4N50TM MOSFET Transistor FQB7N60TM MOSFET Transistor SMK1060D2 MOSFET Transistor FQB5P10TM MOSFET Transistor FCB36N60NTM MOSFET Transistor HFW5N65U MOSFET Transistor SMK1820D2 MOSFET Transistor SMK0825D2 MOSFET Transistor HFW11N40 MOSFET Transistor