HFW10N60S MOSFET Transistor

The HFW10N60S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the HFW10N60S transistor as follows.

HFW10N60S Transistor Specification

Transistor Code		HFW10N60S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	156W
Drain-Source Capacitance		145pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		69nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		29nC

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