FQB13N10 MOSFET Transistor

The FQB13N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB13N10 transistor as follows.

FQB13N10 Transistor Specification

Transistor Code		FQB13N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	12.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.18Ohm
Power Dissipation (Maximum)	PD	65W
Drain-Source Capacitance		100pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		55nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		12nC

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