FQB27N25TM_AM002 MOSFET Transistor

The FQB27N25TM_AM002 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB27N25TM_AM002 transistor as follows.

FQB27N25TM_AM002 Transistor Specification

Transistor Code		FQB27N25TM_AM002
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	25.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		360pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		270nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		50nC

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